TPC8213-H 2006-11-17 1 toshiba field effect transistor silicon n-channel mos type (ultra-high-speed u-mosiii) TPC8213-H high-efficiency dc dc converter applications notebook pc applications portable-equipment applications ? small footprint due to small and thin package ? high-speed switching ? small gate charge: q sw = 2.9 nc (typ.) ? low drain-source on-resistance: r ds (on) = 40 m ? (typ.) ? high forward transfer admittance: |y fs | =11 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 60 v) ? enhancement mode: v th = 1.1 to 2.3 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain ? source voltage v dss 60 v drain ? gate voltage (r gs = 20 k ? ) v dgr 60 v gate ? source voltage v gss 20 v d c (note 1) i d 5 drain current pulse (note 1) i dp 20 a single-device operation (note 3a) p d (1) 1.5 drain power dissipation (t = 10 s) (note 2a) single-device value at dual operation (note 3b) p d (2) 1.1 w single-device operation (note 3a) p d (1) 0.75 drain power dissipation (t = 10 s) (note 2b) single-device value at dual operation (note 3b) p d 2) 0.45 w single-pulse avalanche energy (note 4) e as 90 mj avalanche current i ar 5 a repetitive avalanche energy (note 2a, note 3b, note 5) e ar 0.087 mj channel temperature t ch 150 storage temperature range t stg ? 55 150 note: for notes 1 to 5, refer to the next page. using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec D jeita D toshiba 2-6j1e weight: 0.085 g (typ.) circuit configuration
TPC8213-H 2006-11-17 2 thermal characteristics characteristic symbol max unit single-device operation (note 3a) r th (ch-a) (1) 83.3 thermal resistance, channel to ambient (t = 10 s) (note 2a) single-device value at dual operation (note 3b) r th (ch-a) (2) 114 single-device operation (note 3a) r th (ch-a) (1) 167 thermal resistance, channel to ambient (t = 10 s) (note 2b) single-device value at dual operation (note 3b) r th (ch-a) (2) 278 c/w marking note 1: the channel temperature should not exceed 150c during use. note 2: a) device mounted on a glass-epoxy board (a) b) device mounted on a glass-epoxy board (b) note 3: a) the power dissipation and thermal resistance values are shown for a single device (during single-device operation, power is only applied to one device.) b) the power dissipation and thermal resistance values are shown for a single device (during dual operation, power is evenly applied to both devices.) note 4: v dd = 24 v, t ch = 25c (initial), l = 5 mh, r g = 25 ? , i ar = 5.0 a note 5: repetitive rating: pulse width limited by maximum channel temperature note 6: ? on the lower left of the marking indicates pin 1. fr-4 25.4 25.4 0.8 (unit: mm) (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) * weekly code: (three digits) week of manufacture (01 for first week of year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year) lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code) tpc8213 h
TPC8213-H 2006-11-17 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cutoff current i dss v ds = 60 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 60 ? ? v drain ? source breakdown voltage v (br) dsx i d = 10 ma, v gs = ? 20 v 45 ? ? gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.1 ? 2.3 v r ds (on) v gs = 4.5 v, i d = 2.5 a ? 45 56 drain ? source on-resistance r ds (on) v gs = 10 v , i d = 2.5 a ? 40 50 m ? forward transfer admittance |y fs | v ds = 10 v , i d = 2.5 a 5.5 11 ? s input capacitance c iss ? 625 ? reverse transfer capacitance c rss ? 35 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 175 ? pf rise time t r ? 4 ? turn ? on time t on ? 10 ? fall time t f ? 2 ? switching time turn ? off time t off duty < = = 10 s ? 19 ? ns v dd ? = 10 v, i d = 5 a ? 11 ? total gate charge (gate-source plus gate-drain) (note 7) q g v dd ? = 5 v, i d = 5 a ? 6 ? gate-source charge 1 q gs1 ? 1.6 ? gate-drain (?miller?) charge q gd ? 2.4 ? gate switch charge q sw v dd ? = 10 v, i d = 5 a ? 2.9 ? nc source ? drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 20 a forward voltage (diode) v dsf i dr = 5 a, v gs = 0 v ? ? ? 1.2 v r l = 12 ? v dd ? ? i d = 2.5 a
TPC8213-H 2006-11-17 4 16 12 8 4 0 20 3.25 0 2 v gs = 2.5v 2.75 5 6 10 4.5 4 3 1 8 3.75 3.5 5 3 ta = ? 55c 25 100 common source v ds = 10 v pulse test 3 2.75 v gs = 2.5v 3.25 3.5 3.75 4.5 5 10 6 8 common source ta =25c pulse test 10 6 4 0 8 2 0 0 .2 0.4 0.6 0.8 1 0 1 2 3 4 5 0 8 20 12 16 4 i d = 5 a 1.3 2.5 12 0 0.3 0.4 0.5 0 2 4 6 8 10 0.2 0.1 common source ta = 25 pulse test ta = ? 55c 100 25 common source v ds = 10 v pulse test 1 0.1 100 0.1 1 100 10 10 drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ? ) drain current i d (a) ? y fs ? ? i d forward transfer admittance |y fs | (s) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs 4.5 v gs = 10 v common source ta = 25c pulse test 1 0.1 1 10 10 1000 100 100 common source ta = 2 5 c pulse test
TPC8213-H 2006-11-17 5 c oss c iss c rss `? v ds = 10 v i d = 1 ma ??y (1) (2) (3) (4) v dd = 12 v 24 48 v gs v ds common source i d = 5 a ta = 25c pulse test v gs = -1 v 0 1 5 common source ta = 25c pulse test drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta common source v ds = 10 v i d = 1 ma pulse test ambient temperature ta (c) r ds (on) ? ta drain-source on-resistance r ds (on) (m ? ) common source pulse test total gate charge q g (nc) drain-source voltage v ds (v) dynamic input / output characteristics gate-source voltage v gs (v) ambient temperature ta (c) p d ? ta drain power dissipation p d (w) device mounted on a glass-epoxy board (a)(note 2a) (1)single-device operation (note 3a) (2)single-device value at dual operation(note 3b) device mounted on a glass-epoxy board(b)(note 2b) (3)single-device operation(note 3a) (4)single-device value at dual operation(note 3b) t=10s v gs = 4.5 v 1.3a,2.5a i d = 5a i d = 1.3a,2.5a,5a v gs = 10 v ? 80 160 ? 40 0 40 80 120 100 80 60 40 20 0 0 0.1 ? 0.2 10 100 ? 0.6 ? 0.8 ? 1.0 ? 0.4 1 ? 1.2 common source v gs = 0 v f = 1 mhz ta = 25c 10 0.1 100 1000 10000 1 10 100 0 0.5 1 1.5 ? 80 ? 40 0 40 80 120 160 2 2.5 2 0 0 40 80 120 1.2 1.6 160 0.8 0.4 0 4 12 16 50 20 10 30 40 0 8 10 4 2 6 8 0 60 12 10 3
TPC8213-H 2006-11-17 6 single - pulse device mounted on a glass-epoxy board (a) (note 2a) (1)single-device operation (note 3a) (2)single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3)single-device operation (note 3a) (4)single-device value at dual operation (note 3b) ( 2 ) ( 3 ) ( 4 ) (1) t=1ms * v dss max single-device value at dual operation (note 3b) * single - pulse ta = 2 5 curves must be derated linearly with increase in temperature. 10ms * pulse width t w (s) transient thermal impedance r th ( /w) drain current i d (a) drain-source voltage v ds (v) safe operating area r th ? t w r th ? t w 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 0.1 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 0.1 1 10 100 0.1 10 1 0.1 100 i d max (pulse) *
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